| US 7,538,010 B2 | ||
| Method of fabricating an epitaxially grown layer | ||
| Bruce Faure, Grenoble (France); and Lea Di Cioccio, Saint Ismier (France) | ||
| Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France) | ||
| Filed on Nov. 22, 2005, as Appl. No. 11/283,847. | ||
| Application 11/283847 is a continuation in part of application No. PCT/EP2004/007577, filed on Jul. 07, 2004. | ||
| Application PCT/EP2004/007577 is a continuation in part of application No. PCT/EP2004/007578, filed on Jul. 07, 2004. | ||
| Claims priority of application No. 03 09076 (FR), filed on Jul. 24, 2003; and application No. 03 09079 (FR), filed on Jul. 24, 2003. | ||
| Prior Publication US 2006/0118513 A1, Jun. 08, 2006 | ||
| Int. Cl. H01L 21/30 (2006.01); H01L 21/301 (2006.01) | ||
| U.S. Cl. 438—459 [438/928; 438/977; 438/503; 438/497; 257/E21.568] | 21 Claims |
| 1. A method of forming an epitaxially grown layer, comprising:
providing a support substrate;
creating a region of weakness in the support substrate by implanting atomic species therein to define a support portion and
a remainder portion on opposite sides of the region of weakness, the region of weakness comprising implanted atomic species
in an amount sufficient to facilitate detachment of the support portion from the remainder portion;
epitaxially growing an epitaxially grown layer in association with the support portion prior to detachment of the support
portion from the remainder portion;
applying a first layer of metal onto the epitaxially grown layer of the support portion;
applying a second layer of metal onto an acceptor substrate;
bonding the first layer of metal to the second layer of metal before detaching the remainder portion from the support portion;
and
detaching the reminder portion from the support portion at the region of weakness by supplying energy thereto.
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