| US 7,537,986 B2 | ||
| Semiconductor device and method for manufacturing the same | ||
| Seung Joo Baek, Seoul (Korea, Republic of) | ||
| Assigned to Hynix Semiconductor Inc., Icheon-si (Korea, Republic of) | ||
| Filed on Jul. 05, 2006, as Appl. No. 11/481,502. | ||
| Claims priority of application No. 10-2006-0006986 (KR), filed on Jan. 23, 2006. | ||
| Prior Publication US 2007/0170497 A1, Jul. 26, 2007 | ||
| Int. Cl. H01L 21/337 (2006.01) | ||
| U.S. Cl. 438—195 | 13 Claims |
| 1. A method for forming a semiconductor device, the method comprising:
forming an active region in a semiconductor substrate;
etching the active region to form a first trench and a second trench in a recess region, wherein a vertical structure is formed
between the first trench and the second trench;
etching the vertical structure to form a protruding portion on a bottom of the recess region; and
filling the first and second trenches with a conductive material to define a gate structure.
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