| US 7,537,982 B2 | ||
| Method and structure for isolating substrate noise | ||
| Wai-Yi Lien, Hsin-Chu (Taiwan); and Denny Duan-lee Tang, Saratoga, Calif. (US) | ||
| Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (Taiwan) | ||
| Filed on Jan. 10, 2008, as Appl. No. 11/972,482. | ||
| Application 11/972482 is a division of application No. 11/089186, filed on Mar. 24, 2005, granted, now 7,492,018. | ||
| Claims priority of provisional application 60/611186, filed on Sep. 17, 2004. | ||
| Prior Publication US 2008/0132028 A1, Jun. 05, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 21/76 (2006.01) | ||
| U.S. Cl. 438—154 [438/454] | 14 Claims |
| 1. A method of isolating noise in an integrated circuit, the method comprising:
forming a first circuit region in a substrate;
forming a second circuit region in the substrate;
performing a first proton bombardment to form a first semi-insulating region between the first circuit region and the second
circuit region, wherein the first semi-insulating region extends from a top surface of the substrate into the substrate;
forming a first guard ring extending from the top surface of the substrate into the substrate, wherein the first guard ring
is between the first and the second circuit region, and is adjacent the first semi-insulating region;
performing a second proton bombardment to form a second semi-insulating region, wherein the second semi-insulating region
extends from a surface of a backside of the substrate into the substrate; and
forming a guard layer on the second semi-insulating region from the backside of the substrate.
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