US 7,537,951 B2
Image sensor including spatially different active and dark pixel interconnect patterns
Jeffrey P. Gambino, Westford, Vt. (US); Mark D. Jaffe, Shelburne, Vt. (US); Robert K. Leidy, Burlington, Vt. (US); and Richard J. Rassel, Colchester, Vt. (US)
Assigned to International Business Machines Corporation, Armonk, N.Y. (US)
Filed on Nov. 15, 2006, as Appl. No. 11/560,019.
Prior Publication US 2008/0111159 A1, May 15, 2008
Int. Cl. H01L 21/00 (2006.01)
U.S. Cl. 438—48 7 Claims
OG exemplary drawing
 
1. A method for fabricating an image sensor comprising:
forming a multi-layer interconnect layer over a substrate comprising a plurality of photosensor regions comprising a plurality of dark pixel regions and a plurality of active pixel regions, the multi-layer interconnect layer including a first electrically active pattern with respect to the plurality of active pixel regions and a second electrically active pattern spatially different from the first electrically active pattern with respect to the plurality of dark pixel regions, where the second electrically active pattern comprises at least one interconnect layer not included within the first electrically active pattern that would be spatially located in a light path if formed within the first electrically active pattern.