| US 7,537,950 B2 | ||
| Nitride-based light emitting heterostructure | ||
| Remigijus Gaska, Columbia, S.C. (US); Jianping Zhang, Lexington, S.C. (US); and Michael Shur, Latham, N.Y. (US) | ||
| Assigned to Sensor Electronic Technology, Inc., Columbia, S.C. (US) | ||
| Filed on Dec. 06, 2007, as Appl. No. 11/951,607. | ||
| Application 11/951607 is a division of application No. 11/292519, filed on Dec. 02, 2005, granted, now 7,326,963. | ||
| Claims priority of provisional application 60/633828, filed on Dec. 06, 2004. | ||
| Prior Publication US 2008/0081390 A1, Apr. 03, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—47 [438/46; 438/37] | 19 Claims |
| 1. A method of generating a nitride-based light emitting heterostructure, the method comprising:
forming a light generating structure, the forming a light generating structure including:
forming a set of barrier layers, each barrier layer comprising a graded composition causing electrons to lose energy prior
to entering a quantum well; and
forming a set of quantum wells, each quantum well adjoined by a barrier layer,
wherein the forming a set of quantum wells includes selecting a thickness for each quantum well that is less than a characteristic
radius of a defect responsible for nonradiative recombination.
|