| US 7,537,949 B2 | ||
| Optoelectronic substrate and methods of making same | ||
| Fabrice Letertre, Grenoble (France); and Bruce Faure, Grenoble (France) | ||
| Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France) | ||
| Filed on Mar. 21, 2005, as Appl. No. 11/84,747. | ||
| Claims priority of application No. 05290082 (EP), filed on Jan. 13, 2005. | ||
| Prior Publication US 2006/0166390 A1, Jul. 27, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—34 [438/458; 257/E21.122; 257/E21.568] | 19 Claims |
| 1. A method of producing an optoelectronic substrate which comprises:
providing a semi-conducting Group III metal nitride substrate having a Group III metal face and a prepared nitrogen face;
detaching a thin layer from the prepared nitrogen face of the nitride substrate and transferring it to an auxiliary substrate
to provide at least one Group III metal nitride layer thereon and form an intermediate assembly with the Group III metal face
exposed and with the prepared nitrogen face of the nitride substrate positioned adjacent the auxiliary substrate;
bonding the intermediate assembly to a supporting substrate; and
removing the auxiliary substrate to provide an optoelectronic substrate;
wherein the nitrogen face of the semi-conducting nitride substrate is obtained by polishing to have a dislocation density
of less than about 106cm2, a substrate planarity in the range of 20 micrometers and a surface roughness of less than 0.3 nm RMS measured with an atomic
force microscope over a field of 1×1 μm2.
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