| US 7,537,940 B2 | ||
| Method of manufacturing electronic device capable of controlling threshold voltage and ion implanter controller and system that perform the method | ||
| Young-Ho Lee, Gyeonggi-do (Korea, Republic of); Sun-Yong Lee, Seoul (Korea, Republic of); Doo-Heun Baek, Gyeonggi-do (Korea, Republic of); and Tae-Hoon Park, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Feb. 07, 2005, as Appl. No. 11/53,651. | ||
| Claims priority of application No. 10-2004-0008059 (KR), filed on Feb. 06, 2004. | ||
| Prior Publication US 2005/0176225 A1, Aug. 11, 2005 | ||
| Int. Cl. H01L 21/66 (2006.01) | ||
| U.S. Cl. 438—14 | 27 Claims |
| 1. A method of manufacturing an electronic device comprising:
measuring a critical dimension (CD) of a gate electrode formed on a wafer;
adjusting an ion implantation recipe to form a junction contact plug of a transistor formed on the wafer, based on the measured
CD; and
implanting ions into the wafer to form the junction contact plug using the adjusted ion implantation recipe.
|