| US 7,537,939 B2 | ||
| System and method for characterizing lithography effects on a wafer | ||
| David Ziger, San Antonio, Tex. (US); and Steven Qian, Plano, Tex. (US) | ||
| Assigned to NXP B.V., Eindhoven (Netherlands) | ||
| Appl. No. 10/554,791 PCT Filed Apr. 27, 2004, PCT No. PCT/IB2004/001267 § 371(c)(1), (2), (4) Date Oct. 27, 2005, PCT Pub. No. WO2004/097528, PCT Pub. Date Nov. 11, 2004. |
||
| Claims priority of provisional application 60/466490, filed on Apr. 29, 2003. | ||
| Prior Publication US 2007/0275329 A1, Nov. 29, 2007 | ||
| Int. Cl. G01R 31/26 (2006.01); H01L 21/66 (2006.01) | ||
| U.S. Cl. 438—14 [438/48; 438/78; 257/E27.075; 257/E27.084] | 11 Claims |
| 3. A method for characterizing lithography effects on a wafer, the method comprising:
determining an effect to study;
determining a number of exposure fields to print;
selecting at least one reference die location;
performing a randomization procedure;
printing the reference die at an exposure to make the reference die conspicuous; and
printing each exposure field at the assigned exposure dose.
|