US 7,537,804 B2
	ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates
Cancheepuram V. Srividya, Boise, Id. (US); Noel Rocklein, Boise, Id. (US); John Vernon, Boise, Id. (US); Jeff Nelson, Boise, Id. (US); F. Daniel Gealy, Boise, Id. (US); and David Korn, Boise, Id. (US)
Assigned to Micron Technology, Inc., Boise, Id. (US)
Filed on Apr. 28, 2006, as Appl. No. 11/413,466.
Prior Publication US 2007/0252244 A1, Nov. 01, 2007
Int. Cl. C23C 16/455 (2006.01)

U.S. Cl. 427—255.31  [427/255.32]

23 Claims

1. A method of forming a material over a substrate, the method comprising utilization of at least one iteration of an ALD pulse sequence comprising the pulse subsets M2-M1-R- and M1-(R-M2-)x; where x is at least 2; where M1 is a first metal-containing precursor comprising a first metal, M2 is a second metal-containing precursor comprising a second metal different from the first metal, and R is a reactant which reacts with one or both of the first and second metals; where the material formed over the substrate comprises the first and second metals; where at least a portion of the material is product from reaction of the reactant with one or both of the first and second metals; and where the hyphen between pulses means that the second pulse directly follows the first pulse, with the term “directly follows” indicating that the second pulse either immediately follows the first pulse or that only a purge separates the first and second pulses.