| US 7,537,660 B2 | ||
| Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display | ||
| Yukio Taniguchi, Yokohama (Japan); Masakiyo Matsumura, Yokohama (Japan); Hirotaka Yamaguchi, Yokohama (Japan); Mikihiko Nishitani, Yokohama (Japan); Susumu Tsujikawa, Yokohama (Japan); Yoshinobu Kimura, Yokohama (Japan); and Masayuki Jyumonji, Yokohama (Japan) | ||
| Assigned to Advanced LCD Technologies Development Center Co., Ltd., Yokohama (Japan) | ||
| Filed on May 30, 2006, as Appl. No. 11/442,331. | ||
| Application 11/442331 is a division of application No. 10/603821, filed on Jun. 26, 2003, granted, now 7,101,436. | ||
| Claims priority of application No. 2002-188846 (JP), filed on Jun. 28, 2002. | ||
| Prior Publication US 2006/0213431 A1, Sep. 28, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. C30B 25/04 (2006.01) | ||
| U.S. Cl. 117—94 [117/95; 117/101; 117/105] | 16 Claims |
| 1. A crystallization method comprising:
wavefront-dividing an incident light beam into a plurality of light beams;
condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity
of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which
a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask; and
irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity
distribution to produce a crystallized semiconductor film.
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