US 7,537,659 B2
Method of obtaining a CdTe or CdZnTe single crystal and the single crystal thus obtained
Robert Georges Lucien Triboulet, 24, allee de la Sacletterie, Gif sur Yvette F-91190 (France); and Said Assoumani Said Hassani, 4 ter, rue Alfred Dreyfus, St Cyr l'Ecole F-78210 (France)
Appl. No. 10/486,177
PCT Filed Aug. 06, 2002, PCT No. PCT/FR02/02816
§ 371(c)(1), (2), (4) Date Dec. 10, 2004,
PCT Pub. No. WO03/014428, PCT Pub. Date Feb. 20, 2003.
Claims priority of application No. 01 10512 (FR), filed on Aug. 06, 2001.
Prior Publication US 2005/0115489 A1, Jun. 02, 2005
Int. Cl. C30B 28/06 (2006.01); C30B 29/48 (2006.01); C30B 29/50 (2006.01)
U.S. Cl. 117—89  [117/6; 117/71; 117/100; 117/109; 117/216; 117/957; 117/958] 9 Claims
OG exemplary drawing
 
1. A method for obtaining a Cd1-xZnxTe single crystal, in which x is a value from 0 to 0.2, which comprises the following steps:
a) obtaining a source material of Cd1-xZnxTe having a composition close to that corresponding to congruent sublimation, either by crystallization of liquid Cd1-xZnxTe using Bridgman's horizontal technique under partial cadmium pressure to adjust stoichiometry, or by annealing a Cd1-xZnxTe material pre-synthesized at 800-900° C. in an ampoule with end capillary maintained at ambient temperature,
b) obtaining a polycrystalline block of Cd1-xZnxTe in which x lies between 0 and 0.2 by sublimation of a stoichiometric solid source material of Cd1-xZnxTe in a sealed chamber at a temperature of the chamber zone in which the source material is located at between 900° C. and 1000° C., the difference in temperature ΔT between the zone of the source material and the zone of crystal deposit lying between 30° and 50° C.
c) obtaining a Cd1-xZnxTe single crystal by re-crystallizing the polycrystalline block obtaining at step b), by annealing under isothermal conditions under partial Cd pressure of between 4·105 and 6·105 Pa and at a temperature of between 1000° C. and 1060° C. for a time of between 50 and 200 hours.