US 7,537,503 B2
Electron beam apparatus, and method for manufacturing a spacer used for the same
Taro Hiroike, Kanagawa (Japan); Koji Yamazaki, Kanagawa (Japan); and Yoichi Ando, Tokyo (Japan)
Assigned to Canon Kabushiki Kaisha, Tokyo (Japan)
Filed on Feb. 01, 2006, as Appl. No. 11/344,218.
Application 11/344218 is a division of application No. 10/854367, filed on May 27, 2004, granted, now 7,053,537, filed on May 30, 2006.
Claims priority of application No. 2003-161638 (JP), filed on Jun. 06, 2003.
Prior Publication US 2006/0141892 A1, Jun. 29, 2006
Int. Cl. H01J 63/04 (2006.01); H01J 1/62 (2006.01); H01J 9/00 (2006.01); H01J 9/24 (2006.01)
U.S. Cl. 445—24  [313/495; 313/483; 313/496; 445/25; 445/1; 445/9; 445/14] 2 Claims
OG exemplary drawing
 
1. A method for manufacturing a spacer having a high-resistance film covering a surface of a base material, that is inserted between a first substrate having electron emitting elements and a first conductive member, and a second substrate having a second conductive member set to a potential different from a potential of the first conductive member in a state of contacting the first conductive member and the second conductive member, and electrically connects the first conductive member and the second conductive member via the high-resistance film, said method comprising:
a step of forming the high-resistance film according to a film forming step that includes a step of performing film formation from a direction of a first facing surface that faces the first conductive member, and a step of performing film formation from a direction of a side surface adjacent to the electron emitting element, wherein said film forming step is a step of forming the high-resistance film in which, when a sheet resistance value of the high-resistance film on the first facing surface is represented by R1, and a sheet resistance value of the high-resistance film on the side surface is represented by R2, R2/R1 is 2-200.