| US 7,536,777 B2 | ||
| Use of metal capped seed layers for the fabrication of perpendicular thin film heads | ||
| Hieu Lam, Milpitas, Calif. (US); Patrick Rush Webb, San Jose, Calif. (US); and Yi Zheng, San Ramon, Calif. (US) | ||
| Assigned to Hitachi Global Storage Technologies Netherlands B.V., Amsterdam (Netherlands) | ||
| Filed on Nov. 10, 2006, as Appl. No. 11/595,764. | ||
| Prior Publication US 2008/0110761 A1, May 15, 2008 | ||
| Int. Cl. G11B 5/127 (2006.01); H04R 31/00 (2006.01) | ||
| U.S. Cl. 29—603.16 [29/603.11; 29/603.13; 29/603.15; 29/603.18; 205/119; 205/122; 216/62; 216/65; 216/66; 360/121; 360/122; 360/317; 451/5; 451/41] | 18 Claims |
| 1. A method for making a perpendicular head comprising:
fashioning a pole structure on a surface of a substrate, said pole structure having a tapered pole section in contact with
said substrate, and a gap layer deposited on said tapered pole section;
depositing a conductive base seed layer on said gap layer;
depositing a conductive capping layer on said conducive base seed layer;
depositing a photo resist layer over said capping layer;
removing a portion of said photo resist layer by imaging and developing said photo resist layer, exposing a portion of said
conductive capping layer; and,
electroplating a shield layer over said portion of said conductive capping layer subsequent to removing said portion of said
photo resist layer.
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