| US 7,535,765 B2 | ||
| Non-volatile memory device and method for reading cells | ||
| Eduardo Maayan, Kfar Saba (Israel) | ||
| Assigned to Saifun Semiconductors Ltd., Netanya (Israel) | ||
| Filed on Jul. 10, 2007, as Appl. No. 11/822,777. | ||
| Application 11/822777 is a continuation in part of application No. 11/205411, filed on Aug. 17, 2005, granted, now 7,242,618. | ||
| Application 11/205411 is a continuation in part of application No. 11/007332, filed on Dec. 09, 2004, granted, now 7,257,025. | ||
| Prior Publication US 2008/0002464 A1, Jan. 03, 2008 | ||
| Int. Cl. G11C 16/04 (2006.01) | ||
| U.S. Cl. 365—185.2 [365/185.22] | 16 Claims |
| 1. A method for selecting a read reference level associated with a given logical state for a set of non-volatile memory (“NVM”)
cells, said method comprising:
deriving an initial read reference level from a history cell associated with the set of NVM cells; and
comparing logical state distribution of the set of NVM cells sensed using the initial read reference level against a stored
logical state distribution of the set of NVM cells.
|