| US 7,535,115 B2 | ||
| Wafer and method of producing a substrate by transfer of a layer that includes foreign species | ||
| Fabrice Letertre, Grenoble (France); Yves Mathieu Le Vaillant, Crolles (France); and Eric Jalaguier, Saint Martin d'uriage (France) | ||
| Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France); and Commissariat a l'Energie Atomique (CEA), Paris (France) | ||
| Filed on Nov. 16, 2005, as Appl. No. 11/274,264. | ||
| Application 11/274264 is a division of application No. 10/678127, filed on Oct. 06, 2003, granted, now 7,008,859. | ||
| Claims priority of application No. 02 12405 (FR), filed on Oct. 07, 2002. | ||
| Prior Publication US 2006/0060922 A1, Mar. 23, 2006 | ||
| Int. Cl. H01L 23/58 (2006.01); H01L 23/544 (2006.01) | ||
| U.S. Cl. 257—798 [257/619; 257/620] | 16 Claims |
| 1. A donor wafer for transferring a layer therefrom to a support, the donor wafer having a top surface and comprising:
a zone of weakness present therein at a preselected depth;
at least one transfer layer of a crystalline material that has a predetermined thickness and comprises a semiconductor material
suitable for fabricating a substrate for microelectronics, optoelectronics or optics when transferred to the support; wherein
the transfer layer is defined between the top surface and zone of weakness of the donor wafer; and
foreign atomic species present in and completely throughout the transfer layer at a depth that is within the predetermined
thickness of the transfer layer and above and not in contact with the zone of weakness;
wherein the foreign atomic species is selected to modify at least one of the electrical or optical properties of the transfer
layer to render the transfer layer to be semi-insulating.
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