| US 7,535,101 B2 | ||
| Electrode pad on conductive semiconductor substrate | ||
| Yuichi Akage, Isehara (Japan); Hideki Fukano, Isehara (Japan); Takayuki Yamanaka, Isehara (Japan); and Tadashi Saitoh, Suita (Japan) | ||
| Assigned to Nippon Telegraph and Telephone Corporation, Tokyo (Japan) | ||
| Appl. No. 10/576,627 PCT Filed May 18, 2005, PCT No. PCT/JP2005/009064 § 371(c)(1), (2), (4) Date Mar. 14, 2007, PCT Pub. No. WO2005/112096, PCT Pub. Date Nov. 24, 2005. |
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| Claims priority of application No. 2004-147294 (JP), filed on May 18, 2004. | ||
| Prior Publication US 2007/0290360 A1, Dec. 20, 2007 | ||
| Int. Cl. H01L 23/48 (2006.01) | ||
| U.S. Cl. 257—737 [257/778] | 20 Claims |
| 1. An electrode pad on a conductive semiconductor substrate comprising:
a conductive substrate;
an insulating material film formed on the conductive substrate;
an electrode pad formed on the insulating material film; and
a wiring electrode formed on said insulating material film, connected to said electrode pad, and having a width different
from that of said electrode pad,
wherein the size of said electrode pad is substantially equal to or greater than the size of a part of electrical connection
to an external device, and a first thickness of a first region of said insulating material film on which at least said electrode
pad is formed is different from a second thickness of a second region of said insulating material film on which at least part
of said wiring electrode is formed and which is a region other than said first region so that a characteristic impedance of
said electrode pad is almost matching with a characteristic impedance of the external device connected to said electrode pad.
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