| US 7,535,043 B2 | ||
| Solid-state image sensor, method of manufacturing the same, and camera | ||
| Hiroshi Sakoh, Kyotanabe (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Dec. 27, 2005, as Appl. No. 11/317,194. | ||
| Claims priority of application No. 2004-379943 (JP), filed on Dec. 28, 2004. | ||
| Prior Publication US 2006/0138499 A1, Jun. 29, 2006 | ||
| Int. Cl. H01L 31/0232 (2006.01); H01L 31/18 (2006.01) | ||
| U.S. Cl. 257—294 [257/432; 257/440; 257/E31.121; 438/70; 438/73] | 13 Claims |
| 1. A solid-state image sensor in which pixel cells are arranged on a semiconductor substrate,
wherein each of said pixel cells includes:
a photoelectric conversion unit operable to perform photoelectric conversion of incident light; and
a microlens formed above said photoelectric conversion unit, the microlens corresponding to said photoelectric conversion
unit,
wherein said microlens includes a transparent layer and a color filter layer, the color filter layer being disposed under
the transparent layer, and
wherein the color filter layer has an upper surface which is flat in a center and aslope in a periphery.
|