| US 7,535,019 B1 | ||
| Optoelectronic fiber | ||
| Brian M. Sager, Palo Alto, Calif. (US); and Martin R. Roscheisen, San Francisco, Calif. (US) | ||
| Assigned to Nanosolar, Inc., Palo Alto, Calif. (US) | ||
| Filed on Feb. 18, 2003, as Appl. No. 10/369,338. | ||
| Int. Cl. H01L 31/0336 (2006.01); H01L 31/042 (2006.01) | ||
| U.S. Cl. 257—43 [257/40; 257/466; 257/443; 257/E31.027; 257/E51.027; 257/E31.007; 136/263; 136/252] | 51 Claims |
| 1. An elongate optoelectronic device, comprising:
an elongate core;
at least a first semiconducting layer substantially surrounding the elongate core wherein the first semiconducting layer comprises
of group IB-IIIA-VIA based material, wherein the group IB material comprises copper, wherein the first semiconducting layer
includes a plurality of openings extending through the first semiconducting layer to the elongate core;
at least a second semiconducting layer substantially surrounding the first semiconducting layer, wherein the material of the
first semiconducting layer and the material of the second semiconducting layers are of complementary types; and
a light transmitting electrically conductive layer that substantially surrounds the second semiconducting layer.
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