| US 7,534,701 B2 | ||
| Process for transferring a layer of strained semiconductor material | ||
| Bruno Ghyselen, Seyssinet (France); Daniel Bensahel, Grenoble (France); and Thomas Skotnicki, Crolles-Montfort (France) | ||
| Assigned to S.O.I. Tec Silicon on Insulator Technologies, Bernin (France) | ||
| Filed on Feb. 29, 2008, as Appl. No. 12/40,134. | ||
| Application 12/040134 is a division of application No. 11/165339, filed on Jun. 24, 2005, granted, now 7,338,883. | ||
| Application 11/165339 is a division of application No. 10/615259, filed on Jul. 09, 2003, granted, now 6,953,736. | ||
| Claims priority of provisional application 60/445825, filed on Feb. 10, 2003. | ||
| Claims priority of application No. 02 08602 (FR), filed on Jul. 09, 2002. | ||
| Prior Publication US 2008/0164492 A1, Jul. 10, 2008 | ||
| Int. Cl. H01L 21/30 (2006.01) | ||
| U.S. Cl. 438—458 [257/E21.122; 257/E21.568; 257/E29.193; 438/455; 438/938] | 19 Claims |
| 1. A method of preparing a semiconductor wafer with a strained layer having an elevated critical thickness, comprising:
providing a first wafer having a strained layer of a semiconductor material of a first thickness grown in a first strained
state on a matching layer, wherein:
the semiconductor material has a first lattice parameter corresponding to a relaxed state and has a first critical thickness
corresponding to the first strained state,
the first thickness is below the first critical thickness, and
the matching layer has a matching lattice parameter that is sufficiently different than the first lattice parameter to retain
the strained layer in the first strained state;
transferring the strained layer to a receiving substrate selected to provide the transferred strained layer with a second
critical thickness that is greater than the first critical thickness; and
growing additional strained semiconductor material on the transferred strained layer to provide the transferred strained layer
with a second thickness that is greater than the first critical thickness and less than the second critical thickness.
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