| US 7,532,504 B2 | ||
| Spin injection magnetic domain wall displacement device and element thereof | ||
| Akira Saito, Yokosuka (Japan) | ||
| Assigned to Fuji Electric Holdings Co., Ltd., (Japan) | ||
| Filed on Apr. 20, 2006, as Appl. No. 11/379,474. | ||
| Claims priority of application No. 2005-122223 (JP), filed on Apr. 20, 2005. | ||
| Prior Publication US 2006/0237808 A1, Oct. 26, 2006 | ||
| Int. Cl. G11C 11/14 (2006.01); G11C 11/15 (2006.01); H01L 43/02 (2006.01) | ||
| U.S. Cl. 365—158 [365/171; 365/173; 257/421] | 20 Claims |
| 1. A spin injection magnetic domain wall displacement element comprising:
a magnetic domain wall displacement layer having a magnetic domain wall;
a first magnetic layer group having a first ferromagnetic layer;
a second magnetic layer group having a second ferromagnetic layer; and
a third magnetic layer group having a third ferromagnetic layer,
wherein the first magnetic layer group, the second magnetic layer group, and the third magnetic layer group are disposed in
this order on one side of the magnetic domain wall displacement layer,
wherein the magnetic domain wall in the magnetic domain wall displacement layer is displaceable by flowing electrons between
the first magnetic layer group and the third magnetic layer group, and
wherein the position of the magnetic domain wall in the magnetic domain wall displacement layer is detectable by the difference
in the electrical resistance of a region between the second magnetic layer group and the first or third magnetic layer group.
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