| US 7,532,502 B2 | ||
| Spin injection magnetic domain wall displacement device and element thereof | ||
| Akira Saito, Yokosuka (Japan) | ||
| Assigned to Fuji Electric Holdings Co., Ltd., (Japan) | ||
| Filed on Apr. 04, 2006, as Appl. No. 11/278,613. | ||
| Claims priority of application No. 2005-107114 (JP), filed on Apr. 04, 2005. | ||
| Prior Publication US 2006/0238191 A1, Oct. 26, 2006 | ||
| Int. Cl. G11C 11/14 (2006.01); G11C 11/15 (2006.01); H01L 43/02 (2006.01) | ||
| U.S. Cl. 365—158 [365/171; 365/173; 257/421] | 29 Claims |
| 1. A spin injection magnetic domain wall displacement element comprising:
a magnetic domain wall displacement layer having a magnetic domain wall;
a first magnetic layer group having at least one ferromagnetic layer; and
a second magnetic layer group having at least one ferromagnetic layer,
wherein the first magnetic layer group is disposed at one end of the magnetic domain wall displacement layer and the second
magnetic layer group disposed at the other end of the magnetic domain wall displacement layer, and
wherein the magnetic domain wall in the magnetic domain wall displacement layer is displaceable by flowing electrons between
the first magnetic layer group and the second magnetic layer group.
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