| US 7,532,265 B2 | ||
| Integrated circuit with the cell test function for the electrostatic discharge protection | ||
| Ja-Fu Tsai, Chiayi County (Taiwan); and Wen-Chun Wang, Taichung (Taiwan) | ||
| Assigned to Wintek Corporation, Taichung (Taiwan) | ||
| Filed on Jun. 08, 2005, as Appl. No. 11/147,426. | ||
| Prior Publication US 2006/0279667 A1, Dec. 14, 2006 | ||
| Int. Cl. G02F 1/1333 (2006.01); G02F 1/1343 (2006.01); G02F 1/13 (2006.01); G02F 1/1335 (2006.01) | ||
| U.S. Cl. 349—40 [349/54; 349/55; 349/192; 349/139; 349/103; 257/59; 257/443; 324/770] | 11 Claims |
| 1. An integrated circuit with the cell test function for the electrostatic discharge (ESD) protection which is used in the
ESD protection circuit of a thin film transistor (TFT) liquid crystal display and locates at the surroundings of an active
area of a display panel, comprising:
an ESD protection unit installed on each signal line of a scan line and a data line, wherein the ESD protection unit of the
signal line is connected to each other,
wherein the circuit of the ESD protection unit includes:
a first TFT's gate and drain electrodes are short, and a second TFT's gate and drain electrodes are also shorted with the
first TFT's gate and drain electrodes to the signal line;
a third TFT's gate electrode connects to the first TFT's source electrode, the third TFT's drain electrode connects to the
second TFT's source electrode, and the third TFT's source electrode connects to a common electrode;
a fourth TFT's gate and drain electrodes are short, and a fifth TFT's gate and drain electrodes are short with the fourth
TFT's gate and drain electrodes of to the common electrode; and
a sixth TFT's drain electrode connects to the fourth TFT's source electrode, the sixth TFTs drain electrode connects to a
test pad, and the sixth TFT's source electrode connects to the signal line,
wherein the fifth TFT's source electrode connects to the sixth TFT's gate electrode, and the sixth TFT's gate electrode connects
to a test-switch pad.
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