| US 7,532,203 B2 | ||
| Data input device that utilizes a layer of magnetic particles to store non-volatile input data that is magnetically coupled to an underlying MRAM array | ||
| Manish Sharma, Sunnyvale, Calif. (US) | ||
| Assigned to Samsung Electronic Co., Ltd., (Korea, Republic of) | ||
| Filed on Apr. 26, 2004, as Appl. No. 10/831,110. | ||
| Prior Publication US 2005/0237309 A1, Oct. 27, 2005 | ||
| Int. Cl. G09G 5/00 (2006.01) | ||
| U.S. Cl. 345—173 [345/179; 178/18.01] | 39 Claims |
| 1. An input device, comprising:
a plurality of MRAM cells, each including a sense layer having a changeable magnetic orientation and a reference layer having
a pinned magnetic orientation; and
a layer of particles including at least one particle spaced-apart from a sense layer of a first MRAM cell in said plurality
of MRAM cells,
wherein the at least one particle affects an orientation of a magnetic field of the sense layer of the first MRAM cell when
a magnetic orientation of the at least one particle is changed.
|