| US 7,531,889 B2 | ||
| Epitaxial substrate and semiconductor element | ||
| Makoto Kiyama, Itami (Japan); Takuji Okahisa, Itami (Japan); and Takashi Sakurada, Itami (Japan) | ||
| Assigned to Sumitomo Electric Industries, Ltd., Osaka (Japan) | ||
| Filed on Sep. 01, 2005, as Appl. No. 11/219,546. | ||
| Claims priority of application No. 2004-254815 (JP), filed on Sep. 01, 2004. | ||
| Prior Publication US 2006/0046331 A1, Mar. 02, 2006 | ||
| Int. Cl. H01L 31/112 (2006.01); H01L 29/47 (2006.01); H01L 29/20 (2006.01) | ||
| U.S. Cl. 257—615 [257/289; 257/472; 257/E29.081] | 28 Claims |
| 1. An epitaxial substrate comprising:
a gallium nitride free-standing substrate including a first surface and a second surface opposite from said first surface
and having a carrier concentration exceeding 1×1018 cm−3; and
a first gallium nitride epitaxial film disposed on said first surface;
wherein:
said first gallium nitride epitaxial film has a thickness of at least 5 microns and no more than 1000 microns; and
said first gallium nitride epitaxial film has a carrier concentration of at least 1×1014 cm−3 and no more than 1×1017 cm−3.
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