| US 7,531,888 B2 | ||
| Integrated latch-up free insulated gate bipolar transistor | ||
| Jun Cai, Scarborough, Me. (US) | ||
| Assigned to Fairchild Semiconductor Corporation, South Portland, Me. (US) | ||
| Filed on Nov. 30, 2006, as Appl. No. 11/564,948. | ||
| Prior Publication US 2008/0128744 A1, Jun. 05, 2008 | ||
| Int. Cl. H01L 29/00 (2006.01) | ||
| U.S. Cl. 257—556 [257/557; 257/492; 257/493; 257/E29.197] | 27 Claims |
| 1. A lateral insulated gate bipolar transistor (LIGBT) device, comprising:
a semiconductor substrate;
an anode region in said semiconductor substrate;
a cathode region of a first conductivity type in said substrate laterally spaced from said anode region;
a cathode region of a second conductivity type in said substrate located proximate to and on a side of said cathode region
of said first conductivity type opposite from said anode region;
a drift region in said semiconductor substrate between said anode region and said cathode region of said first conductivity
type;
an insulated gate operatively coupled to said cathode region of said first conductivity type located on a side of said cathode
region of said first conductivity type opposite from said anode region; and
an insulating spacer overlying said cathode region of said second conductivity type;
wherein the lateral dimensions of said insulating spacer and said cathode region of said second conductivity type are substantially
equal or substantially smaller than the lateral dimension of said cathode region of said first conductivity type.
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