| US 7,531,886 B2 | ||
| MOSFET fuse programmed by electromigration | ||
| Satya N. Chakravarti, Hopewell Junction, N.Y. (US); Thekkemadathil V. Rajeevakumar, Scarsdale, N.Y. (US); and Timothy J. Sullivan, Franklin Lakes, N.J. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Jul. 06, 2006, as Appl. No. 11/428,923. | ||
| Prior Publication US 2008/0006902 A1, Jan. 10, 2008 | ||
| Int. Cl. H01L 23/525 (2006.01) | ||
| U.S. Cl. 257—530 [257/209; 257/E23.147] | 14 Claims |
| 1. A fuse, comprising:
a field effect (FET) transistor having a silicided gate, silicided source and silicided drain, wherein said source and drain
are coupled to each other by a silicided channel; and
a voltage stimulus applied to said drain, with said source grounded and said gate connected to said drain, said applied voltage
inducing electromigration of nitride silicide (NiSi) in said silicided channel by current flowing through said silicided channel.
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