| US 7,531,851 B1 | ||
| Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same | ||
| Rajesh D. Rajavel, Oak Park, Calif. (US); Mary Y. Chen, Oak Park, Calif. (US); Steven S. Bui, Simi Valley, Calif. (US); David H. Chow, Newbury Park, Calif. (US); James Chingwei Li, Simi Valley, Calif. (US); Mehran Mokhtari, Thousand Oaks, Calif. (US); and Marko Sokolich, Los Angeles, Calif. (US) | ||
| Assigned to HRL Laboratories, LLC, Malibu, Calif. (US) | ||
| Filed on Feb. 28, 2007, as Appl. No. 11/713,070. | ||
| Int. Cl. H01L 31/0328 (2006.01) | ||
| U.S. Cl. 257—197 [257/592; 257/E27.053; 438/312; 438/341; 438/357] | 10 Claims |
| 1. A method for reducing interface charge between epitaxially grown layers, the method comprising:
selecting a first InP layer;
forming an As-based nucleation layer on the first InP layer;
epitaxially growing a second InP layer on the As-based nucleation layer; and performing an ex-situ cleaning in a solution
containing hydrogen fluoride (HF) of the first InP layer prior to forming the As-based nucleation layer.
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