| US 7,531,841 B2 | ||
| Nitride-based semiconductor light emitting device | ||
| Kun Yoo Ko, Hwaseong (Korea, Republic of); Bang Won Oh, Seongnam (Korea, Republic of); Hun Joo Hahm, Seongnam (Korea, Republic of); Je Won Kim, Suwon (Korea, Republic of); Hyung Jin Park, Suwon (Korea, Republic of); Seok Min Hwang, Suwon (Korea, Republic of); and Dong Woo Kim, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do (Korea, Republic of) | ||
| Filed on Jan. 09, 2007, as Appl. No. 11/651,023. | ||
| Claims priority of application No. 10-2006-0030502 (KR), filed on Apr. 04, 2006. | ||
| Prior Publication US 2007/0228388 A1, Oct. 04, 2007 | ||
| Int. Cl. H01L 27/15 (2006.01) | ||
| U.S. Cl. 257—79 [257/88; 257/E33.033; 257/91] | 11 Claims |
| 1. A nitride-based semiconductor LED comprising:
a substrate;
an n-type nitride semiconductor layer formed on the substrate;
an active layer formed on a predetermined region of the n-type nitride semiconductor layer;
a p-type nitride semiconductor layer formed on the active layer;
a transparent electrode formed on the p-type nitride semiconductor layer;
a p-type electrode pad formed on the transparent electrode;
a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination
angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad;
a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode
pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and
an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that
the n-type electrode pad faces the p-type electrode pad, wherein the n-type electrode pad further includes a pair of n-electrodes
extending in parallel to one side of the adjacent n-type nitride semiconductor layer,
wherein the transparent electrode further includes a line-shaped groove extending from the n-type electrode pad toward the
p-type electrode pad so as to expose the top surface of the p-type nitride semiconductor layer, the transparent electrode
being plane-divided by the line-shaped groove.
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