| US 7,531,835 B2 | ||
| Increased mobility from organic semiconducting polymers field-effect transistors | ||
| Alan J. Heeger, Santa Barbara, Calif. (US); Daniel Moses, Santa Barbara, Calif. (US); Guangming Wang, Goleta, Calif. (US); and James S. Swensen, Goleta, Calif. (US) | ||
| Assigned to The Regents of the University of California, Oakland, Calif. (US) | ||
| Filed on Nov. 21, 2005, as Appl. No. 11/284,797. | ||
| Application 11/284797 is a continuation of application No. 10/320933, filed on Dec. 16, 2002, granted, now 7,078,261. | ||
| Prior Publication US 2006/0128053 A1, Jun. 15, 2006 | ||
| Int. Cl. H01L 35/24 (2006.01); H01L 51/00 (2006.01) | ||
| U.S. Cl. 257—40 [257/642; 257/E21.024; 257/E39.007; 257/E51.046] | 5 Claims |
| 1. A field effect transistor, comprising:
a first electrode layer including a source and drain electrode;
a regioregular, head-to-tail poly 3-hexylthiophene semiconducting polymer layer;
an insulating layer; and
a second electrode layer including a gate electrode,
wherein the semiconducting polymer layer has an absorbance of a 0-0 absorption band in an optical spectrum.
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