| US 7,531,832 B2 | ||
| Light-emitting transistor | ||
| Hirokazu Tada, Okazaki (Japan); and Tomo Sakanoue, Okazaki (Japan) | ||
| Assigned to Japan Science and Technology Agency, Kawaguchi (Japan) | ||
| Appl. No. 10/589,359 PCT Filed Feb. 14, 2005, PCT No. PCT/JP2005/002162 § 371(c)(1), (2), (4) Date Aug. 14, 2006, PCT Pub. No. WO2005/079119, PCT Pub. Date Aug. 25, 2005. |
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| Claims priority of application No. 2004-038951 (JP), filed on Feb. 16, 2004. | ||
| Prior Publication US 2007/0187665 A1, Aug. 16, 2007 | ||
| Int. Cl. H01L 35/24 (2006.01) | ||
| U.S. Cl. 257—40 [257/E25.008] | 20 Claims |
| 1. A light-emitting transistor, comprising:
a) a gate electrode covered with an insulating film;
b) a first source/drain electrode provided on the insulating film and made of an electron-injecting material whose work function
is equal to or lower than 4.26 electron-volts;
c) a second source/drain electrode provided separately from the first source/drain electrode on the insulating film and made
of a hole-injecting material whose work function is higher than 4.26 electron-volts, the second source/drain electrode including
an adhesive base layer made of the electron-injecting material and entirely covered with the hole-injecting material; and
d) a light-emitter layer provided on the insulating film between the first source/drain electrode and the second source/drain
electrode and made of an organic semiconductor.
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