| US 7,531,679 B2 | ||
| Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride | ||
| Ziyun Wang, New Milford, Conn. (US); Chongying Xu, New Milford, Conn. (US); Ravi K. Laxman, San Jose, Calif. (US); Thomas H. Baum, New Fairfield, Conn. (US); Bryan Hendrix, Danbury, Conn. (US); and Jeffrey Roeder, Brookfield, Conn. (US) | ||
| Assigned to Advanced Technology Materials, Inc., Danbury, Conn. (US) | ||
| Filed on Nov. 14, 2002, as Appl. No. 10/294,431. | ||
| Prior Publication US 2004/0096582 A1, May 20, 2004 | ||
| Int. Cl. C07F 7/10 (2006.01); C23C 14/10 (2006.01) | ||
| U.S. Cl. 556—412 [427/255.27] | 22 Claims |
| 1. A silicon compound of the formula
[SiXn(NR1R2)3-n]2 (1)
wherein:
R1 and R2 may be the same as or different from one another and each is independently selected from the group consisting of H, C1-C5, alkyl, and C3-C6 cycloalkyl;
X is selected from the group consisting of halogen, hydrogen and deuterium; and
0<n≤2, with the proviso that when R1=R2=ethyl or methyl, X≠Cl, when R1=R2=ethyl and n=1 or 2, X≠H, when R1=R2=isopropyl and n=2, X≠Cl or H, and when R1=R2=isopropyl and n=1, X≠H.
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