| US 7,531,469 B2 | ||
| Dosimetry using optical emission spectroscopy/residual gas analyzer in conjunction with ion current | ||
| Kartik Ramaswamy, San Jose, Calif. (US); Seon-Mee Cho, Santa Clara, Calif. (US); Tsutomu Tanaka, Santa Clara, Calif. (US); and Majeed A. Foad, Sunnyvale, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Mar. 02, 2007, as Appl. No. 11/681,313. | ||
| Application 11/681313 is a continuation in part of application No. 10/971772, filed on Oct. 23, 2004. | ||
| Prior Publication US 2008/0075834 A1, Mar. 27, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—795 [427/523] | 16 Claims |
| 1. A method for processing a substrate, comprising:
positioning the substrate in a plasma reactor configured to perform a plasma process;
generating a plasma in the plasma reactor to start the plasma process by supplying a RF bias from a RF bias power coupled
to the plasma reactor;
obtaining a value of the at least one attribute of the plasma using a first sensor configured to monitor at least one attribute
of the plasma generated in the plasma reactor;
obtaining a value of total ion current using a second sensor configured to monitor at least one attribute of the RF bias power
coupled to the plasma reactor; and
determining a real time dose value of one or more ion species in the plasma from the value of the at least one attribute of
the plasma and the value of total ion current.
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