| US 7,531,465 B2 | ||
| Method of manufacturing nitride-based semiconductor light emitting device | ||
| Jae-hee Cho, Yongin-si (Korea, Republic of); Cheol-soo Sone, Yongin-si (Korea, Republic of); Dong-yu Kim, Gwangju-si (Korea, Republic of); Hyun-gi Hong, Gwangju-si (Korea, Republic of); and Seok-soon Kim, Gwangju-si (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., (Korea, Republic of) | ||
| Filed on Mar. 23, 2007, as Appl. No. 11/690,504. | ||
| Claims priority of application No. 10-2006-0045112 (KR), filed on May 19, 2006. | ||
| Prior Publication US 2007/0269918 A1, Nov. 22, 2007 | ||
| Int. Cl. H01L 21/31 (2006.01) | ||
| U.S. Cl. 438—781 [438/35; 438/42; 438/759; 430/519; 257/E21.026; 257/E21.028] | 17 Claims |
| 1. A method of manufacturing a nitride-based semiconductor light-emitting device including an n-doped semiconductor layer,
an active layer, a p-doped semiconductor layer, an n-electrode and a p-electrode, the method comprising:
forming an azobenzene-functionalized polymer film on a base layer by selecting one layer from the group consisting of the
n-doped semiconductor layer, the p-doped semiconductor layer, the n-electrode and the p-electrode as the base layer;
forming surface relief gratings of a micro-pattern caused by a photophysical mass transport property of azobenzene-functionalized
polymer by irradiating interference laser beams onto the azobenzene-functionalized polymer film;
forming a photonic crystal layer using a metal oxide on an recessed gap of the azobenzene-functionalized polymer film; and
removing the azobenzene-functionalized polymer film.
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