US 7,531,458 B2
Organometallic compounds
Deodatta Vinayak Shenai-Khatkhate, Danvers, Mass. (US); and Qing Min Wang, North Andover, Mass. (US)
Assigned to Rohm and Haas Electronics Materials LLP, Marlborough, Mass. (US)
Filed on Sep. 29, 2006, as Appl. No. 11/540,072.
Claims priority of provisional application 60/834478, filed on Jul. 31, 2006.
Prior Publication US 2008/0026578 A1, Jan. 31, 2008
Int. Cl. H01L 21/44 (2006.01); C23C 16/00 (2006.01); C07F 5/00 (2006.01)
U.S. Cl. 438—681  [438/680; 556/1; 556/18; 556/20; 556/43; 556/52; 556/53; 118/715; 106/1.25; 427/248.1] 9 Claims
 
1. A method of depositing a film comprising the steps of:
providing a substrate in a reactor; conveying a composition comprising an organometallic compound having the formula
(EDG-(CR1R2)y′—CR3═CR4—(CR5R6)y″)nM+mL1(m-n)L2p, wherein each R1 and R2 is independently chosen from H, (C1-C6)alkyl and EDG; R3═H, (C1-C6)alkyl, EDG or EDG-(CR1R2)y′; R4═H or (C1-C6)alkyl; each R5 and R6 is independently chosen from H and (C1-C6)alkyl; EDG is an electron donating group; M=a metal; L1=an anionic ligand; L2 is a neutral ligand; y′=0-6; y″=0-6; m=the valence of M; n=1-7; and p=0-3 and an organic solvent into the reactor using direct liquid injection; and depositing a film comprising the metal on the substrate.