| 1. A process for controlling thickness of a buried oxide in a semiconductor structure that is to be used for electronics or
optoelectronics applications, which comprises:
preparing a structure comprising, successively, a substrate, a first oxide layer, an intermediate layer, a second oxide layer
made of an oxide of a semiconductor material, and a semiconductor layer made of the semiconductor material, and
heat treating the structure in an inert or reducing atmosphere at a temperature and a time sufficient to diffuse an amount
of oxygen of the second oxide layer through the semiconductor layer to uniformly decrease the thickness of the second oxide
layer to thus form a semiconductor structure comprising successively a substrate, a first oxide layer, an intermediate layer,
a second oxide layer of reduced thickness, and a semiconductor layer.
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