| US 7,531,410 B2 | ||
| Semiconductor flash memory device and method of fabricating the same | ||
| Yong-Suk Choi, Hwaseong-si (Korea, Republic of); Jeong-Uk Han, Suwon-si (Korea, Republic of); Hee-Seog Jeon, Suwon-si (Korea, Republic of); Seung-Jin Yang, Seoul (Korea, Republic of); and Hyok-Ki Kwon, Yongin-si (Korea, Republic of) | ||
| Assigned to Samsung Electronic Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Dec. 29, 2006, as Appl. No. 11/648,057. | ||
| Claims priority of application No. 10-2006-0048945 (KR), filed on May 30, 2006. | ||
| Prior Publication US 2007/0278531 A1, Dec. 06, 2007 | ||
| Int. Cl. H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—259 [438/701] | 13 Claims |
| 1. A method of fabricating a semiconductor flash memory device, comprising:
forming a mask pattern to reveal a predetermined portion of a semiconductor substrate;
forming a recess in the revealed portion of the semiconductor substrate, the recess having slanted sides narrowing downward
from the surface of the semiconductor substrate;
forming a gate insulation film on the recess;
forming a polysilicon pattern on the gate insulation film;
forming a control gate electrode on the polysilicon pattern;
removing the mask pattern and revealing upper sides of the polysilicon pattern; and
forming a floating gate electrode from the polysilicon pattern,
wherein the floating gate electrode comprises projections adjacent to the slanted sides of the recess.
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