| US 7,531,408 B2 | ||
| Method of manufacturing a semiconductor device containing a PbxSr(1-x)[Zr,Ti]xRu(1-x)O3 film in a capacitor | ||
| Keisuke Nakazawa, Tokyo (Japan); Koji Yamakawa, Tokyo (Japan); Katsuaki Natori, Yokohama (Japan); Soichi Yamazaki, Yokohama (Japan); Hiroshi Itokawa, Yokohama (Japan); and Hiroyuki Kanaya, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on May 25, 2007, as Appl. No. 11/754,022. | ||
| Application 11/754022 is a division of application No. 10/833096, filed on Apr. 28, 2004, granted, now 7,233,040. | ||
| Claims priority of application No. 2003-318393 (JP), filed on Sep. 10, 2003. | ||
| Prior Publication US 2007/0231948 A1, Oct. 04, 2007 | ||
| Int. Cl. H01L 21/8234 (2006.01) | ||
| U.S. Cl. 438—240 [438/3] | 5 Claims |
| 1. A method of manufacturing a semiconductor device, comprising:
forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O,
wherein forming the capacitor includes forming a crystallized film which contains Pb, Sr, Zr, Ti, Ru and O, and wherein the
film which contains Pb, Sr, Zr, Ti, Ru and O has a perovskite-type crystal structure and is represented by
PbxSr(1-x)[Zr,Ti]xRu(1-x)O3 in which x is 0.8 to 0.9.
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