| US 7,531,395 B2 | ||
| Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors | ||
| Eric R. Blomiley, Boise, Id. (US); Gurtej S. Sandhu, Boise, Id. (US); Cem Basceri, Reston, Va. (US); and Nirmal Ramaswamy, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Jan. 12, 2005, as Appl. No. 11/35,298. | ||
| Application 11/035298 is a continuation in part of application No. 10/932151, filed on Sep. 01, 2004. | ||
| Prior Publication US 2006/0051941 A1, Mar. 09, 2006 | ||
| Int. Cl. H01L 21/84 (2006.01); H01L 21/8238 (2006.01); H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—156 [438/206; 438/212; 438/269; 257/E21.41; 257/E21.571] | 53 Claims |
| 16. A method of forming a layer comprising epitaxial silicon, comprising:
providing an opening within a silicate glass-comprising material received over a monocrystalline material, the opening comprising
opposing sidewalls comprising silicate glass-comprising material;
lining the opposing sidewalls of the opening with a silicon nitride-comprising material, monocrystalline material being exposed
at a base of the lined opening, the silicon nitride-comprising material lining all of the opposing sidewalls of the silicate
glass-comprising material, the silicon nitride-comprising lining being thicker over the sidewalls at an uppermost portion
of the opening than at a lowestmost portion of the opening; and
epitaxially growing a silicon-comprising layer within the opening from the exposed monocrystalline material within the lined
opening.
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