| US 7,531,390 B2 | ||
| Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device | ||
| Masato Hiramatsu, Yokohama (Japan); Hiroyuki Ogawa, Yokohama (Japan); and Masakiyo Matsumura, Yokohama (Japan) | ||
| Assigned to Advanced LCD Technologies Development Center Co., Ltd., Yokohama (Japan) | ||
| Filed on May 25, 2005, as Appl. No. 11/136,371. | ||
| Claims priority of application No. 2004-196111 (JP), filed on Jun. 04, 2004; application No. 2004-254283 (JP), filed on Sep. 01, 2004; application No. 2004-286646 (JP), filed on Sep. 30, 2004; and application No. 2005-076190 (JP), filed on Mar. 17, 2005. | ||
| Prior Publication US 2005/0272184 A1, Dec. 08, 2005 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—149 [438/795; 257/E21.134; 257/E21.347] | 1 Claim |
| 1. A crystallizing method of irradiating a laser beam onto an incident face of a non-single-crystal semiconductor film to
crystallize the semiconductor film, the laser beam having a light intensity profile including a plurality of inverted triangular
peak patterns in cross section, the crystallizing method comprising:
providing a cap film which presents properties of absorbing a part of the laser beam, on the incident face of the non-single-crystal
semiconductor film,
wherein the cap film is composed of at least one layer of silicon dioxide film and at least one layer of SiOx film and the
SiOx film has a thickness of more than 150 nm (x is less than 2).
|