| US 7,531,377 B2 | ||
| Optical device | ||
| Craig Edward Murphy, Cambridge (United Kingdom); Salvatore Cina, Rennes (France); Timothy Butler, Cambridge (United Kingdom); Matthew Roberts, Cambridge (United Kingdom); Nalinkumar Lallubhai Patel, Cambridge (United Kingdom); Clare Louise Foden, Cambridge (United Kingdom); Mark Levence Leadbeater, Cambridge (United Kingdom); Daniel Alan Forsythe, Cambridge (United Kingdom); Robert Sidney Archer, Essex (United Kingdom); Nicholas de Brissac Baynes, Newmarket (United Kingdom); Nathan Luke Phillips, Cambridge (United Kingdom); Anil Raj Duggal, Niskayuna, N.Y. (US); and Jie Liu, Niskayuna, N.Y. (US) | ||
| Assigned to Cambridge Display Technology Limited, Cambridgeshire (United Kingdom) | ||
| Appl. No. 10/526,804 PCT Filed Sep. 03, 2003, PCT No. PCT/GB03/03960 § 371(c)(1), (2), (4) Date Dec. 15, 2005, PCT Pub. No. WO2004/023573, PCT Pub. Date Mar. 18, 2004. |
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| Claims priority of provisional application 60/480502, filed on Jun. 20, 2003. | ||
| Claims priority of application No. 0220404.8 (GB), filed on Sep. 03, 2002. | ||
| Prior Publication US 2006/0154384 A1, Jul. 13, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—82 [438/99; 257/40; 313/504; 313/506; 428/690] | 19 Claims |
| 1. A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable
of injecting or accepting charge carriers of a first type;
forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting
material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent;
forming a second layer in contact with the first layer by depositing a second semiconducting material from a solution in the
solvent;
forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type; and
subjecting the first layer to one or more of heat treatment, vacuum treatment and ambient drying treatment in order to render
the first layer at least partially insoluble
wherein at least one of the first and second semiconducting materials is a polyfluorene comprising optionally substituted
repeat units of formula (I):
 wherein R and R′ are selected from hydrogen or optionally substituted alkyl, alkoxy, aryl, arylalkyl, heteroaryl and heteroarylalkyl,
and at least one of R and R′ comprises an optionally substituted C4-C20 alkyl group.
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