| US 7,531,294 B2 | ||
| Method for forming film pattern, method for manufacturing semiconductor device, liquid crystal television, and EL television | ||
| Yoshiaki Yamamoto, Kanagawa (Japan); Hiroko Yamamoto, Kanagawa (Japan); and Yukie Suzuki, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken (Japan) | ||
| Filed on Mar. 24, 2005, as Appl. No. 11/87,829. | ||
| Claims priority of application No. 2004-090377 (JP), filed on Mar. 25, 2004. | ||
| Prior Publication US 2005/0214688 A1, Sep. 29, 2005 | ||
| Int. Cl. G03F 9/00 (2006.01); G03F 7/00 (2006.01) | ||
| U.S. Cl. 430—311 [430/328; 430/330; 430/313; 430/323] | 48 Claims |
| 1. A method for forming a film pattern, comprising the steps of:
forming a first film pattern over a substrate;
forming a second film pattern which is curved on the surface of the first film pattern;
irradiating the second film pattern with light to condense the light;
generating heat by irradiating the first film pattern with the condensed light;
modifying the second film pattern by the heat;
forming a third film pattern by removing an unmodified region of the second film pattern; and
forming a fourth film pattern by etching the first film pattern using the third film pattern as a mask.
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