| US 7,531,290 B2 | ||
| Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | ||
| Katsuhiro Kobayashi, Joetsu (Japan); Youichi Ohsawa, Joetsu (Japan); Takeshi Kinsho, Joetsu (Japan); and Takeru Watanabe, Joetsu (Japan) | ||
| Assigned to Shin-Etsu Chemical Co., Ltd., Tokyo (Japan) | ||
| Filed on Oct. 27, 2006, as Appl. No. 11/588,413. | ||
| Claims priority of application No. 2005-316171 (JP), filed on Oct. 31, 2005. | ||
| Prior Publication US 2007/0099112 A1, May 03, 2007 | ||
| Int. Cl. G03C 1/73 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); C07C 303/32 (2006.01) | ||
| U.S. Cl. 430—270.1 [430/921; 430/925; 430/919; 430/920; 430/905; 430/907; 430/326; 430/325; 430/330; 558/54; 558/46; 558/47; 558/53; 562/101] | 16 Claims |
| 2. A photoacid generator for chemically amplified resist compositions which generates a sulfonic acid upon exposure to high-energy
radiation selected from UV, deep-UV, electron beam, x-ray, excimer laser, gamma-ray and synchrotron radiation, said sulfonic
acid having the general formula (1a):
R1SO3—CH(Rf)—CF2SO3−H+ (1a)
wherein R1 is a substituted or unsubstituted, straight, branched or cyclic C1-C20 alkyl group or a substituted or unsubstituted C6-C15 aryl group, and Rf is hydrogen or trifluoromethyl.
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