| US 7,531,112 B2 | ||
| Composition for forming dielectric, capacitor produced using composition, and printed circuit board provided with capacitor | ||
| Hyo Soon Shin, Seoul (Korea, Republic of); Jin Ho Kim, Daegu (Korea, Republic of); Jeong Joo Kim, Daegu (Korea, Republic of); and Min Ji Ko, Kyungki-do (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., Suwon, Kyungki-Do (Korea, Republic of) | ||
| Filed on Jun. 25, 2004, as Appl. No. 10/875,323. | ||
| Claims priority of application No. 10-2004-0031374 (KR), filed on May 04, 2004. | ||
| Prior Publication US 2007/0027246 A1, Feb. 01, 2007 | ||
| Int. Cl. H01B 1/00 (2006.01) | ||
| U.S. Cl. 252—500 [252/62; 252/62.9 R; 252/516; 361/270; 361/304; 361/311; 361/320; 361/762; 428/329; 524/404; 524/575] | 11 Claims |
| 1. A composition for forming a dielectric, comprising:
40 to 99 vol % of thermoplastic or thermosetting resin;
1 to 60 vol % of semiconductive filler, and
greater than zero to 59 vol % of ferroelectric insulator substance on a total volume of the composition, the ferroelectric
insulator substance being selected from the group consisting of BaTiO3, PbTiO3, PMN-PT, SrTiO3, CaTiO3, and MgTiO3, and wherein
the semiconductive filler includes an insulator layer formed on a surface thereof.
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