| US 7,531,038 B2 | ||
| Crystal growth method | ||
| Seiji Sarayama, Miyagi (Japan); Hisanori Yamane, Miyagi (Japan); Masahiko Shimada, Miyagi (Japan); Masafumi Kumano, Kanagawa (Japan); Hirokazu Iwata, Miyagi (Japan); and Takashi Araki, Miyagi (Japan) | ||
| Assigned to Ricoh Company, Ltd., Tokyo (Japan) | ||
| Filed on Dec. 14, 2005, as Appl. No. 11/302,128. | ||
| Application 11/302128 is a division of application No. 10/134895, filed on Apr. 30, 2002, granted, now 7,001,457. | ||
| Claims priority of application No. 2001-134171 (JP), filed on May 01, 2001; application No. 2001-147703 (JP), filed on May 17, 2001; application No. 2001-152977 (JP), filed on May 22, 2001; application No. 2001-195954 (JP), filed on Jun. 28, 2001; application No. 2001-355720 (JP), filed on Nov. 21, 2001; and application No. 2001-358808 (JP), filed on Nov. 26, 2001. | ||
| Prior Publication US 2006/0130739 A1, Jun. 22, 2006 | ||
| Int. Cl. C30B 13/08 (2006.01) | ||
| U.S. Cl. 117—73 [117/77; 117/81; 117/952] | 3 Claims |
| 1. A group-III nitride crystal growth method comprising the steps of:
a) preparing a mixed molten liquid of sodium metal and a substance at least containing gallium metal;
b) causing growth of a gallium nitride crystal from the mixed molten liquid prepared in said step a) and a substance at least
containing nitrogen; and
c) creating a state in said step b) in which nitrogen can be introduced into the molten liquid prepared by said step a);
wherein the purity of the sodium metal used in said step a), the purity of the molten liquid prepared in said step a), and
the purity of the substance at least containing nitrogen used in said step b) are so high that the surface of the mixed molten
liquid used in said step b) is free from being covered by polycrystalline or amorphous gallium nitride,
wherein a predetermined container made of pyrolytic BN is used for the crystal growth, and
wherein the alkaline metal has a purity of at least 99.95%.
|