| US 7,531,011 B2 | ||
| Method of manufacturing capacitor device | ||
| Tomoo Yamasaki, Nagano (Japan) | ||
| Assigned to Shinko Electric Industries Co., Ltd., Nagano-Shi (Japan) | ||
| Filed on Nov. 15, 2005, as Appl. No. 11/272,688. | ||
| Application 11/272688 is a division of application No. 11/020062, filed on Dec. 23, 2004, granted, now 7,079,371. | ||
| Claims priority of application No. 2003-430568 (JP), filed on Dec. 25, 2003. | ||
| Prior Publication US 2006/0061936 A1, Mar. 23, 2006 | ||
| Int. Cl. H01G 9/00 (2006.01) | ||
| U.S. Cl. 29—25.03 [29/25.41; 29/25.42; 361/321.3] | 8 Claims |
| 1. A method of manufacturing a capacitor device comprising the steps of:
forming a conductive film on a substrate;
forming a plurality of dielectric film patterns each having a different film thickness in a plurality of different areas on
the conductive film respectively, said plurality of dielectric film patterns being separated from each other;
forming upper electrodes on the plurality of dielectric film patterns respectively, the upper electrodes being separated from
each other; and
forming a plurality of lower electrodes respectively by patterning the conductive film to obtain a plurality of capacitors
electrically insulated from each other, constructed by the lower electrodes, the dielectric film patterns, and the upper electrodes
on the substrate,
wherein electrostatic capacities of respective capacitors are different.
|