| US 7,530,359 B2 | ||
| Plasma treatment system and cleaning method of the same | ||
| Yoichiro Numasawa, Machida (Japan); and Yoshimi Watabe, Yokohama (Japan) | ||
| Assigned to Canon Anelva Corporation, Kawasaki-shi (Japan); Sanyo Electric Co., Ltd., Osaka (Japan); Renesas Technology Corporation, Tokyo (Japan); Matsushita Electric Industrial Co., Ltd., Osaka (Japan); Ulvac, Inc., Chigasaki-shi (Japan); Hitachi Kokusai Electric Inc., Tokyo (Japan); Tokyo Electron Limited, Tokyo (Japan); and Kanto Denka Kogyo Co., Ltd., Tokyo (Japan) | ||
| Appl. No. 10/477,457 PCT Filed May 16, 2002, PCT No. PCT/JP02/04740 § 371(c)(1), (2), (4) Date Nov. 12, 2003, PCT Pub. No. WO02/093632, PCT Pub. Date Nov. 21, 2002. |
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| Claims priority of application No. 2001-148327 (JP), filed on May 17, 2001. | ||
| Prior Publication US 2004/0149386 A1, Aug. 05, 2004 | ||
| Int. Cl. B08B 7/04 (2006.01); B08B 7/00 (2006.01) | ||
| U.S. Cl. 134—1.1 [134/26; 134/30; 134/22.1; 134/22.12; 438/905] | 5 Claims |
| 1. A cleaning method of a plasma treatment system, for growing an insulating film on a substrate by plasma CVD, then taking
out the substrate, and then removing the film deposited inside a chamber by plasma, wherein the plasma treatment system is
constructed to cover an inside wall of the chamber down to at least 3 cm from a main surface of a first electrode by an insulator
ring, the cleaning method comprising sequential steps of:
forming a gap between the first electrode and a second electrode of at least 0.5 cm and a gap of not more than 5 mm between
the insulator ring and the second electrode, and performing a first cleaning by generating a first density plasma,
lowering the second electrode to a bottom surface of the insulator ring, and performing a second cleaning by generating the
first density plasma, and
lowering the second electrode to its lowest position lower than the bottom surface of the insulator ring, and performing a
third cleaning by generating a second density plasma having a density lower than the first density plasma,
the first density plasma and second density plasma being generated by power of a very high frequency.
|