| US 7,369,427 B2 | ||
| Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements | ||
| Zhitao Diao, Fremont, Calif. (US); Yiming Huai, Pleasanton, Calif. (US); Thierry Valet, Sunnyvale, Calif. (US); Paul P. Nguyen, San Jose, Calif. (US); and Mahendra Pakala, San Jose, Calif. (US) | ||
| Assigned to Grandis, Inc., Milpitas, Calif. (US) | ||
| Filed on Sep. 09, 2004, as Appl. No. 10/938,219. | ||
| Prior Publication US 2006/0049472 A1, Mar. 09, 2006 | ||
| Int. Cl. G11C 11/00 (2006.01); G11C 11/14 (2006.01); G11C 11/15 (2006.01) | ||
| U.S. Cl. 365—158 [365/171; 365/173] | 26 Claims |
| 17. A magnetic element comprising:
a pinned layer;
a spacer layer, the spacer layer being nonmagnetic;
a free layer, the spacer layer residing between the pinned layer and the free layer;
wherein at least one of the pinned layer, the spacer layer, and the free layer includes an internal spin engineered layer
configured to more strongly scatter majority electrons than minority electrons, the internal spin engineered layer including
at least one of a single metal, RuX, and CoFeY, wherein X includes at least one of Os, Ir, Rh, Re, Mn, Cr, and V, Y includes
at least one of Ru, Os, Ir, Rh, Re, Mn, Cr, and V and wherein the metal includes at least one of Os, Ir, Re, Mn, Mo, and W;
and
wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current
is passed through the magnetic element;
wherein the free layer includes the internal spin engineered layer.
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