US 7,368,017 B2
Method and apparatus for semiconductor wafer planarization
Fred C. Redeker, Fremont, Calif. (US); John Boyd, Atascadero, Calif. (US); Yezdi Dordi, Palo Alto, Calif. (US); William Thie, Mountain View, Calif. (US); and Bob Maraschin, Cupertino, Calif. (US)
Assigned to Lam Research Corporation, Fremont, Calif. (US)
Filed on Dec. 12, 2003, as Appl. No. 10/734,704.
Prior Publication US 2005/0126932 A1, Jun. 16, 2005
Int. Cl. B05C 3/02 (2006.01)
U.S. Cl. 118—429  [118/620; 451/36; 451/41] 16 Claims
OG exemplary drawing
 
1. An apparatus for depositing a planarizing layer over a wafer, comprising:
a tank defined by a bottom and an enclosing wall, the tank being configured to contain an electroless plating solution;
a wafer support structure disposed within the tank, the wafer support structure being configured to support a wafer at a submerged position within the electroless plating solution to be contained within the tank;
a planar member disposed above and substantially parallel to the wafer support structure, the planar member capable of being positioned proximate to the wafer to be supported by the wafer support structure such that the planar member serves as an upper confinement boundary for material deposited on the wafer through electroless plating reactions; and
a radiant energy source disposed above the planar member and above the wafer support structure, the radiant energy source being oriented to direct radiant energy through the planar member and to the wafer to be supported by the wafer support structure.