US 7,528,408 B2
	Semiconductor thin film and process for production thereof
Kazuo Takeda, Tokorozawa (Japan); Jun Gotou, Mobara (Japan); Masakazu Saito, Mobara (Japan); Makoto Ohkura, Fuchu (Japan); Takeshi Satou, Kokubunji (Japan); Hiroshi Fukuda, Kodaira (Japan); and Takeo Shiba, Kodaira (Japan)
Assigned to Hitachi, Ltd., Tokyo (Japan)
Filed on Jan. 31, 2006, as Appl. No. 11/342,602.
Application 11/342602 is a continuation of application No. 10/462792, filed on Jun. 17, 2003, granted, now 7,022,183.
Claims priority of application No. 2002-284735 (JP), filed on Sep. 30, 2002.
Prior Publication US 2006/0118036 A1, Jun. 08, 2006
Int. Cl. H01L 29/10 (2006.01)

U.S. Cl. 257—64  [257/70; 257/75]

2 Claims

1. In a polycrystalline semiconductor thin film, a semiconductor thin film characterized in that hillocks whose height is high locally compared with the surroundings are linearly arranged, the average size of the crystal grains in the direction perpendicular to the array direction of the hillocks is larger than 0.4 μm, and the angle between the direction of array of hillocks and one side of the substrate on which the polysilicon film is formed is within the range of 0.1 to 2 degrees.