| US 7,525,852 B2 | ||
| Nonvolatile memory | ||
| Kenji Kozakai, Tachikawa (Japan); Takeshi Nakamura, Kodaira (Japan); Tatsuya Ishii, Koganei (Japan); Motoyasu Tsunoda, Sagamihara (Japan); Shinya Iguchi, Fujisawa (Japan); and Junichi Maruyama, Yokohama (Japan) | ||
| Assigned to Renesas Technology Corp., Tokyo (Japan) | ||
| Filed on Mar. 13, 2008, as Appl. No. 12/48,208. | ||
| Application 12/048208 is a continuation of application No. 11/797842, filed on May 08, 2007, granted, now 7,366,034. | ||
| Application 11/797842 is a continuation of application No. 11/330233, filed on Jan. 12, 2006, granted, now 7,230,859, filed on Jun. 12, 2007. | ||
| Application 11/330233 is a continuation of application No. 11/053423, filed on Feb. 09, 2005, granted, now 7,012,845, filed on Mar. 14, 2006. | ||
| Application 11/053423 is a continuation of application No. 10/914363, filed on Aug. 10, 2004, granted, now 6,868,032, filed on Mar. 15, 2005. | ||
| Application 10/914363 is a continuation of application No. 10/667505, filed on Sep. 23, 2003, granted, now 6,788,575, filed on Sep. 07, 2004. | ||
| Claims priority of application No. 2002-278952 (JP), filed on Sep. 25, 2002. | ||
| Prior Publication US 2008/0158963 A1, Jul. 03, 2008 | ||
| Int. Cl. G11C 5/14 (2006.01) | ||
| U.S. Cl. 365—189.09 [365/189.05] | 4 Claims |
| 1. A nonvolatile memory apparatus, comprising:
a control unit;
a nonvolatile memory array including a first area for storing program codes, a second area for storing first data received
from outside the nonvolatile memory apparatus, and a third area for storing second data generated by the control unit; and
a volatile memory,
wherein the control unit performs a first read operation, without a read instruction from outside the nonvolatile memory apparatus,
for reading the program codes in the first area of the nonvolatile memory array to the volatile memory, and makes the program
codes available to output to outside the nonvolatile memory, and
the control unit performs a write operation, in response to a write instruction from outside the nonvolatile memory apparatus,
for writing data received from outside the nonvolatile memory apparatus to the second area and writing data generated in accordance
with the data received from outside the nonvolatile memory apparatus to the third area.
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